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Please written by computer source Q7. With a 1:1 projection system having g-line (436 nm) exposure and an NA of 0.5, what is the achievable
Please written by computer source
Q7. With a 1:1 projection system having g-line (436 nm) exposure and an NA of 0.5, what is the achievable resolution with a photoresist thickness of 5 microns using contact, proximity (separation distance 20 microns) and projection lithography, respectively
could you halp me ?
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