Question
Problem 2.1 On a (100) silicon ( 400mu m thick) wafer, 3000-angstrom angstrom -thick SiO_(2) has been thermally grown and patterned for a 250- mu
Problem 2.1 On a (100) silicon (
400\\\\mu m
thick) wafer,
3000-\\\\angstrom \\\\angstrom
-thick
SiO_(2)
has been thermally grown and patterned for a 250-\
\\\\mu
-diameter circle on both sides of the wafer (the circular area is where the
SiO_(2)
is removed, and the circle on the front side\ is aligned with that on the backside). If the wafer is etched in EPW for (a) 1 hour, (b) 4 hours, and (c) 12 hours, what will be\ the resulting structures? Draw the top views and cross-sectional views for (a), (b), and (c). Assume that the EPW etches\ (100) silicon planes at
1\\\\mu (m)/(m)in
, while it etches the (111) planes 35 times slower (i.e.,
(1)/(35)\\\\mu (m)/(m)in
).
Step by Step Solution
There are 3 Steps involved in it
Step: 1
Get Instant Access to Expert-Tailored Solutions
See step-by-step solutions with expert insights and AI powered tools for academic success
Step: 2
Step: 3
Ace Your Homework with AI
Get the answers you need in no time with our AI-driven, step-by-step assistance
Get Started