Q1 Heat and Mass Transfer

(1) Consider a low-pressure chemical vapor deposition diffusion reactor to lay a thin film of the semiconductor gallium, Ga, onto a silicon wafer surface. Gallium metal is not volatile, but trimethyl gallium (TMG, Ga(CH3)3,114.72g/gmol ) is volatile. In the presence of H2 gas at high temperature, TMG will decompose to solid Ga on a surface by the following reaction: Ga(CH3)3(g)+3/2H2(g)Ga(s)+3CH4(g). At 700C, this surface reaction is diffusion limited. (a) Develop an integral model to predict the flux of TMG to the wafer surface. (b) What would be the simplified model of (a) if the reactants are dilute