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Q2) A p-type 100-oriented silicon wafer with a resistivity of 10ohmcm is placed in a wet oxidation system to grow a field oxide 0.5m at

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Q2) A p-type 100-oriented silicon wafer with a resistivity of 10ohmcm is placed in a wet oxidation system to grow a field oxide 0.5m at 1050C. Determine the time required to grow the oxide

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