Question 2 0/1 point An abrupt silicon pn junction at zero bias has dopant concentrations of No - 5 X 1017 cm and N, -1 X 1097 cm3 at T-300K Calculate the Fermi level on each side of the junction with respect to the intrinsic Fermi level and add the two values together to get Vot -0.773 V Vbi - 0.814 V V-0.796 V Voi - 0.856 V