QUESTION 3 (a) (b) You are given two materials, X and as in Figure Q3(a). Investigate the type of material X and material Y and justify your answer. Then, compare the energy band between material X and material Y. X V. 12 V -12 (i) 15 Figure Q3(a) Analyse the voltage waveforms of the input, V, and the output, V. for a clamper circuit shown in Figure Q3(b)(i) and Figure Q3(b)(ii). i. Based on your experience in electronic circuit design, develop a clamper circuit based on the input waveform, Vi and the output waveform, Vo given. Assume an ideal diode is used. Then, prove the value of V. for positive cycle and negative cycle by calculation. (i) Y Vo 7.5 th -16.5 (ii) Figure Q3(b) 12 (5 marks) (ii) ii. If the ideal diode is changed to Germanium diode, what the effect of the output voltage measured? (10 marks) (c) The doping process intentionally adds impurities into the pure semiconductor material to produce two types of semiconductor material: n-type and p-type semiconductors. As an engineer for the research and development (R&D) department in the semiconductor manufacturing industry, you are required to analyze the difference between n-type and p-type semiconductors. Your explanation will be the fundamental knowledge for the new product development in the near future. (d) A designer proposes a circuit that consists of a voltage regulator (sinusoidal) input signal, vin with a peak voltage of 15 V, as shown in Figure Q3(d). As an engineer in the same department, you are required to find the solution for the maximum and minimum peak of the output signal, Vout, when the diode is forward and reverse bias. HE O Vin Ideal V 5 V= Figure Q3(d) R (6 marks) Vout (4 marks) [25 marks]