Question 4 Question: Not complete Part 1) Marked out of 1.00 Identify each of the energy level diagrams below. In this case Egap = 1.153 eV, EA = 0.069 eV, EB = 0.059 eV. Flag question Empty levels Filled levels Egap Egap EB Figure 1. Diagram for empty and filled levels in a material. In this material, there is a small energy gap Eqc between the empty and filled levels. A. (No answer given) B. (No answer given) Part 2) BE(Alt + A) Recall the following subshell schemes: . Silicon 1822822p63s23p2 = [Ne]3s23p2. Aluminium [Ne] 3s23p- . Phosphorus [Ne]3s23p3 . Argon [Ne]3823p6 . Gallium [Ar] 3d10 482 4p] . Arsenic [Ar]3d10 4s2 4p3 In a silicon lattice, which of the following could be added to create an n-type semi-conductor? O Aluminium O PhosphorusFigure 1. Diagram for empty and filled levels in a material. In this material A. (No answer given) B. (No answer given) (No answer given) Part 2) n-type semiconductor Recall the following subshell schemes: p-type semiconductor " Silicon 1s-2s2 2p 3s- 3p. = Ne 3s-3p-. . Aluminium Ne 3s* 3pFigure 1. Diagram for empty and filled levels in a material. In this material, there is a small energy gap Eqc between the empty and filled levels. A. (No answer given) B. (No answer given) Part 2) Recall the following subshell schemes: . Silicon 1s22s2 2p63s23p2 = [Ne]3s23p2. . Aluminium [Ne]3823p] . Phosphorus [Ne]3823p3 . Argon [Ne]3s23p . Gallium [Ar] 3d10 4s2 4p] . Arsenic [Ar] 3d10 482 4p3 In a silicon lattice, which of the following could be added to create an n-type semi-conductor? O Aluminium O Phosphorus O Argon O Gallium O Arsenic Part 3) What maximum wavelength of light is required to excite an electron across the energy gap labelled EA in figure A in the diagram in part 1? nm Check