Question 9 of 12 0.1/1 .. . View Policies Show Attempt History Current Attempt in Progress Your answer is partially correct. For an ideal p-n junction rectifier with a sharp boundary between its two semiconducting sides, the current I is related to the potential difference V across the rectifier by 1 = lo(eeV/kT - 1), where lo, which depends on the materials but not on I or V, is called the reverse saturation current. The potential difference Vis positive if the rectifier is forward-biased and negative if it is back-biased. For T = 300 K, calculate the ratio of the current for a 0.70 V forward bias to the current for a 0.70 V back bias. Number i 1.42e10 Units This answer has no units e Textbook and Media