r03.04,03.11,03.12 assume the mobilities in Si are e=1500,cm2/Vs and p=450 cm2/Vs at 300K for both intrinsic and extrinsic Si. F01: *03.11 1(8) : A Si sample is doped with 104 atom % of P. Using the atomic mass of Si (28.0) and its density (2.33g/cm3), determine the donor dopant concentration [atoms/m m3 ]. From this information, determine the conductivity in 1cm1. =T06: 03.04(8) : What is the resistivity [m] of an intrinsic Si sample at 300K ? Assume that T=300.K and that the concentration of electrons in the conduction band is ni=1.501010cm3. Use your answer and Example 3.1 to compare and contrast inSi and in-Ge as semiconductors. How might the differences affect your choice of material for a commercial application? ET06: *03.12 (8) : What is the resistivity of a Si sample doped with 1ppm of Al? Why is this resistivity higher than that for a sample doped with 1 ppm of P? Use your answer to justify the trends in the data shown in Figure 3.29