Solve these physics exams questions with detailed solutions. I took these questions from past exams. I want to revise on these it's like to come up in my upcoming exams

Be able to explain how doping (n or p type) changes the bandstructure of silicon. Be able to understand and apply the equations for pn product. Understand the approximations usually made for how doping influences the carrier concentration for n and p type doping, and when these are combined. Be able to sketch the temperature dependence of n, p and hence conductivity in_ doped (p, or n-type) semiconductor, including how the energy gap and the activation energy for dopants are obtained from this. Be able to identify and describe the three regimes in the temperature dependence of carrier concentration for doped semiconductors. Be able to explain the concept of Hall Effect (see S1) as a means to measure carrier concentration in a semiconductor or metal. Understand minimum conductivity and how it is derived. Be able to quote the rules by which a bandstructure diagram can be constructed for a multi-layered device / structure