Tetrachlorosilane ( (SiCl) gas is reacted with hydrogen gas (H) to produce electronic-grade polycrystalline silicon at SiCl4(g)+2H2(g)Si(s)+4HCl(g) The reaction rate may experience diffusion limitations at the growing Si solid surface. To address this concem, the diffusion coeflicient coefficients in this system must be estimated a) Estimate the binary diffusion coefficient of SiCl4 in H2 gas (a)? The Lennard-Jones parameters for SiCl4 are =5.08A and /K,358K