The attached question is in the snapshot.

6. The piezoresistance coefficient will change depending on dopant concentration, N, and temperature, T, and is given by the formula: T(N, T)= To* P(N, T) Where To is the low-doped room temperature piezoresistance coefficient, and P(N,T) is the piezoresistance factor shown in the figure below, which is dependent on temperature and acceptor dopant concentration. 1.5 1.0 P(N, T) 0.5 T=200 K T=350 K T=225 K T=375 K T-250 K X+DO T-400 K HOX+DO T=275 K T=425 K T=300 K T=450 K T-325 K 0.0 10 101 10'9 NA (cm ) Consider a suspension beam which has a dopant concentration of 1019cm and the temperature is 350K. Using the room-temperature piezoresistance coefficient from the notes and the plot above, calculate the piezoresistance coefficient of this sensor. Assume that the stress is applied in the same direction as the applied current