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The concentration of elections n and holes p for an intrinsic semiconductor at temperature T can be explained as n=p=A+T^3/2 exp[-Eg|2KBT) where Eg is
The concentration of elections n and holes p for an intrinsic semiconductor at temperature T can be explained as n=p=A+T^3/2 exp[-Eg|2KBT) where Eg is the band gap and A is a constant. If the mobility of both types of carriers is proportional to T^-3/2, then the log of the conductivity is a linear function of T^-1 with slope:
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Matlab An Introduction with Applications
Authors: Amos Gilat
5th edition
1118629868, 978-1118801802, 1118801806, 978-1118629864
