The donor concentration in a sample of n type Si (semiconductor) is increased by a factor of 100. Assuming the sample to be non- degenerate, the magnitude of shift in the Fermi level at 300 K is nearly (Use kT = 25 MeV at 300 K) (1) 11.51 MeV (2) 115.15 MeV 57.5 MeV (4) (3) (5) Zero Question not attempted Consider the circuit shown for sufficiently large voltages, the voltage VD across the diode is given approximately by (symbols have their usual meanings) iD VD (1) VD = kT S In kT (2) VD: = (3) VD = In 2 kT q S S In (4) VD (5) = 2 kT In q Question not attempted Consider the following statements: (A) A low pass RC circuit with a short time constant is known as an integrator. (B) A high pass RC circuit with a large time constant is known as a differentiator. (C) Integrator is less sensitive to noise voltage differentiator. than a Select the correct answer from the following options: (1) only (A) is correct. (2) only (B) is correct. (3) only (C) is correct. (4) onload content.58 (5) Question not attempted