Question
The electron concentration in a uniformly, lightly doped N type silicon t room temperature varies linearly with 10^17 cm^3 at x=0 to 610^16 cm^3 at
The electron concentration in a uniformly, lightly doped N type silicon t room temperature varies linearly with 10^17 cm^3 at x=0 to 6×10^16 cm^3 at x=2 micron. Electron are supplied to keep this concentration with time. Calculate the electron current density in Si if no electric field is present. (Assuming mobility of electron to be 1000cm^2V^-1sec at 300k and Boltzmann constant 8.62×10^-5eV.
Step by Step Solution
3.52 Rating (155 Votes )
There are 3 Steps involved in it
Step: 1
Given ntype silicon T 300k concentration X0 16 at x 2m 6 X ...
Get Instant Access to Expert-Tailored Solutions
See step-by-step solutions with expert insights and AI powered tools for academic success
Step: 2
Step: 3
Ace Your Homework with AI
Get the answers you need in no time with our AI-driven, step-by-step assistance
Get Started
Principles of heat transfer
Authors: Frank Kreith, Raj M. Manglik, Mark S. Bohn
7th Edition
495667706, 978-0495667704
