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The enhancement mode n-channel MOSFET M is biased at a de drain current ID of 50.0A in the saturation region with gate-source and drain-source

The enhancement mode n-channel MOSFET M is biased at a dc drain current ID of 50.0A in the saturation region

The enhancement mode n-channel MOSFET M is biased at a de drain current ID of 50.0A in the saturation region with gate-source and drain-source voltages shown in Figure 3. Small-signal parameters and components for this device at the dc operating point are given below. B = 250A/V =0 G C = 250f F gs Cad=175fF Cgb=40f F Cbd Ch=800f F = Apply this data to calculate the gain-bandwidth product or in radians/second. Show your work and explain in detail all assumptions you make. M + VGS D ID = 50A VDS S Figure 3 M biased in the saturation region

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