The Fermi-Dirac function gives the fraction of allowed states, f(E), at an energy level E, that are populated at a given temperature. a. Compute f(E) for T=300K and a state that is 0.1eV above EF. b. How would this change in the case of a 1eV gap between E and EF ? c. What does this tell you about the intrinsic carrier concentration for a metal versus a semiconductor with a moderate gap (silicon has a band gap of 1.1eV )