Question
The ID-VDS characteristics of an NMOSFET with L=0.5um and VT=0.5V, Vdsat=2.5V. Assume vsat=107cm/s and VG=6.5V, calculate the following (up to 3 significant digits) at the
The ID-VDS characteristics of an NMOSFET with L=0.5um and VT=0.5V, Vdsat=2.5V. Assume vsat=107cm/s and VG=6.5V, calculate the following (up to 3 significant digits) at the drain voltage is just enough to reach the saturation point:
What is the velocity of the carrier near the source in cm/s?
What is the lateral E-field near the drain in V/cm?
What is the effective mobility of the MOSFET in cm2/V-s?
What is the lateral E-field near the source in V/cm?
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Analysis and Design of Analog Integrated Circuits
Authors: Paul R. Gray, Paul J. Hurst Stephen H. Lewis, Robert G. Meyer
5th edition
1111827052, 1285401107, 9781285401102 , 978-0470245996
