The inkjet problem! An example of arrays of Micronozzles used for inkjet printing is as shown in the Figure below These structures are fabricated by etching through Silicon wafer using an anisotropic wet etchant. Fig.1 Array of Micronozzles You are asked to design a photomask for fabricating these nozzles using photolithography process with positive photoresist and subsequent etching of Silicon using TMAH etchant. a) (5 points) Derive a generic expression for the relationship between the area of the bright field mask opening (A), area of the nozzle opening (a), angle of misalignment (), and the thickness of the Silicon wafer (T), to fabricate a single square-pyramidal nozzle element b) (5 points) To avoid misalignment issues, a lithography engineer advices you to design the mask with circular bright fields and trust the anisotropic etching to produce the desired result. If the length of each side of your nozzle opening be 250 um, derive an expression for the change in the area of a mask opening with respect to the change in thickness of the wafer (Assume minimum wafer thickness is 250 um) Show detailed calculation and support with suitable diagrams as necessary The inkjet problem! An example of arrays of Micronozzles used for inkjet printing is as shown in the Figure below These structures are fabricated by etching through Silicon wafer using an anisotropic wet etchant. Fig.1 Array of Micronozzles You are asked to design a photomask for fabricating these nozzles using photolithography process with positive photoresist and subsequent etching of Silicon using TMAH etchant. a) (5 points) Derive a generic expression for the relationship between the area of the bright field mask opening (A), area of the nozzle opening (a), angle of misalignment (), and the thickness of the Silicon wafer (T), to fabricate a single square-pyramidal nozzle element b) (5 points) To avoid misalignment issues, a lithography engineer advices you to design the mask with circular bright fields and trust the anisotropic etching to produce the desired result. If the length of each side of your nozzle opening be 250 um, derive an expression for the change in the area of a mask opening with respect to the change in thickness of the wafer (Assume minimum wafer thickness is 250 um) Show detailed calculation and support with suitable diagrams as necessary