The output of the column address NOR decoder is directly applied to the bit line sent

to the memory cell during a READ operation.

The READ operation in a static memory cell is non$-$destructive

The PROM memory is Programmed once at the manufacturer

The row address decoder in a random access memory activates the bit line

A $512$ Mbit static memory has $14$ entry bits to the row address decoder and $13$ entry

bits to the column address decoder

The READ operation in a dynamic memory cell is destructive

The WRITE operation from a static memory cell is faster than the READ operation

In a ROM, the presence of a MOSFET at the node means a ONE is stored

The read operation is usually longer than the write operation in a static memoryTrue and false

To SET an SR Flip$-$Flop the $S$ and $R$ terminals should be High at the same time

A Flip$-$Flop is a latch with the output$/$input Feedback disconnected

During a READ operation, the Bit and Bit$($bar$)$ lines in a memory cell are both connected

to the same voltage $($Supply or ground$)$

The EEPROM is a memory that can be erased and reprogramed electrically by charging

and discharging a floating gate.

A zero is stored in a READ Only Memory $($ROM$)$ by connecting an NMOST at the

intersection between the row and bit lines of the address

OR gates have larger dynamic power activity factor than XOR gates

NAND gates has a smaller activity factor than NOR gates for dynamic power

consumption $\frac{\frac{?}{?}}{?}$

Difference between stored $1$ and stored $0$ in EEPROM's relates to the difference in the

threshold voltage of a MOSFET due to charging and discharging a floating gate

A zero is stored in a READ Only Memory $($ROM$)$ if there is no NMOST connected at

the intersection between the row and bit lines of the address