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The region of a silicon device that is at room temperature [T = 300 K] is doped with 1015 cm-3 acceptor atoms. A stream of
The region of a silicon device that is at room temperature [T = 300 K] is doped with 1015 cm-3 acceptor atoms. A stream of minority carriers is injected at x = D and the distribution of minority carriers in the sample is assumed to be linear. decreasing from a value of 1011 cm3 at x = 0 to the equilibrium value at x = W, where W is 10 microns. (20 marks] Sketch the region. Determine the diffusion current density of electrons. kindly sketch the region, i need to know the region please
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