The room-temperature electrical conductivity of a silicon specimen needs to be 5.93103(m)1 at 10m from the surface. The surface concentration of the dopant can be fixed at 11021m3. Assuming this needs to be doped p-type, how long does the diffusion experiment need to run? Some useful information: QBoron=3.87eV,QPhosphorous=4.13eV, temperature of furnace is 800C,DBoron,1000C=1.51013cm2/s,DPhosphorous,1000C is 9.110 14cm2/s