Two-step doping: You are attempting to a two-step diffusion of boron into an n-type silicon substrate (ND = 51016 cm-3 ). The boron pre-deposition step was done for 1.25 hr at 850 C. You removed the boron source material and started the dopant drive step, but your schedule didn't allow you to complete it at on time. Instead, a bit here and bit there, with the final schedule: a. 3 hours at 1100 C. b. The wafer is cooled to 400 C and left overnight for 16 hours. c. Another 3 hours at 1000 C. d. The wafer is again cooled to 600 C and left overnight for 21 hours. e. A final high-temperature drive at 1100 C for 5 hours. f. The wafer is then cooled and removed from the dopant drive furnace. What is the total dose of boron, the final junction depth, and the final surface concentration?to