Unless otherwise specified, assume Si is the semiconductor and is at room temperature (300 K). For Si, the bandgap is E-1.10 eV with effective masses of me/m -1.08 and m/m -0.60, and effective densities of states at room temperature of N (300) -2.82 x 10 cm and N, (300) 1.17 x 10 cm. (Note: The effective mass of an electron is complicated... you have to use me/m-0.26 to get the correct N(T). See the notes. 1. Under appropriate conditions, the E-k relationship in a ID crystal might be described by the relationship E(k)-C(1-coska)-EC(1-cos ka) where k is the wave vector with -x/a