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2-Shown is a Si NPN BJT at 300K, with the following specifications: 1 m N 0.5 jum Wa N C In the emitter Nor=-10

 

2-Shown is a Si NPN BJT at 300K, with the following specifications: 1 m N 0.5 jum Wa N C In the emitter Nor=-10 cm", Leg=2 m, T-8X10 sec, In the base, the Doping NAB varies linearly from 10 atx=0 to 10 cm at x=W=1 m, L= 10 m Ta 5x10 sec In the collector Npc 5x10 cm, Lac-10 um, Tec 10 sec, (a) if VER=-0.6V, Vca=0V calculate y and By (b) calculate lg, lc and Is.

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