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3 A pn step junction is fabricated in silicon with a donor concentration of 1 x 1015 cm on one side on the junction
3 A pn step junction is fabricated in silicon with a donor concentration of 1 x 1015 cm on one side on the junction and an acceptor concentration of 5 x 1014 cm 3 on the other. Find Xp, Xn, and the depletion width W at 300 K. (The permittivity of silicon is 11.68 0, where is the permittivity of vacuum, &0 = 8.854 x 10-12 F/m.) Select 3 correct answer(s) |Xp = 0.997 m Xp = 0.550 m Xp = 0.220 m Xp = 0.440 m Xn = 0.498 m Xn = 0.220 m Xn = 0.550 m n = 0.770 m W = 1.50 m W = 0.770 m W = 1.20 m W = 1.11 m
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To find xp and xn we need to use the intrinsic carrier concentrations and the donor and acceptor concentrations The intrinsic carrier concentration in silicon is about 108 x 1010 cm3 at room temperatu...Get Instant Access to Expert-Tailored Solutions
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