What is the subthreshold leakage current in nanoamps for an NMOS FET at 300K when it has Vgs = 194mV ? Assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 31nm, and an effective oxide thickness, Toxe, of 39 angstroms. Use: W = 7.1m, L = 0.7m, Vt = 330mV and kT/q = 26mV at 300K. Note that since the answer for this question may be very small, be sure to give your answer to at least 3 significant figures