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How does the current change as doping concentration of p region increases? What I am confusing now is that i think if the concentration

How does the current change as doping concentration of p region increases? What I am confusing now is that i  

How does the current change as doping concentration of p region increases? What I am confusing now is that i think if the concentration increases there will be more hole to cross the junction and that makes the current higher. Or I can also say that as width of depletion layer decrease, carriers can easily cross the junction. It will increase the current. However, the equation of current, ID=qA(D/Lpn/ND + Dn/Lan?/NA) [exp((eV)/KT)-1] , shows that if N_a increases, value of current decreases. Can you explain what is correct? Does current increase or decrease as concentration increase?

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