QUESTION 1 What is the minority carrier concentration on the No side of the junction in cm? Assume n = 1.08 x10 cm QUESTION 2 What is the minority carrier concentration on the N side of the junction in units of cm ? 2 points QUESTION 3 Calculate the built-in potential at T=300K, in mV. Note that the Boltzmann constant is 1.3807x10-23 J/K; 1 eV = 1.602x10-19 J. The Boltzmann constant is thus 8.6186x10-5 eV/K. 3 points = What is the zero-bias junction capacitance per cm for a diode with N = 108 cm- on the p-type side and ND the n-type side? Assume T = 300 K. The relative permittivity of silicon Er is 11.7, permittivity of free space E0 is QUESTION 4 8.854e10-14 F/cm. Thus &s = ErxEo. The junction capacitance with no reverse bias is given by Cjo depletion width with no reverse bias. Please submit your answer in terms of nF/cm (nano is 10). - Save Answer Save Answer 1015 cm -3 on Es/Wdo, where wdo is the QUESTION 5 4 points Save Answer -3 -3 A pn junction with ND = 9 x 106 cm and NA = 4 x 1015 cm experiences a reverse bias voltage of 1.6 V. It is also given = that ni = 1.08 x 100 cm-, the relative permittivity of silicon Er is 11.7, and the permittivity of free space E0 is 8.854x10-4 F/cm. Thus Es ErxEo. The junction capacitance with no reverse bias is given by Cjo = Es/Wdo, where who is the depletion width with no reverse bias. With reverse bias, the junction width becomes wd = WdoV(1+Vr/Vbi) What is the junction capacitance per unit area in terms of fF/m ? Note that a Femto (f) is 1x10-5 and that 1 m is 1x10-6 m.