wwwwwwwwm Problem #2: A 0.4 m thick layer InGaAsP is used in a laser cavity 250 m long and 3 m wide. Use A 5x107/s, B = 1x10-10 cm/s, C = 5x10-29 cm6/s. = A) Assuming n=p, plot the individual recombination currents as a function of carrier density (1016 to 3x1018 cm) due to defect, radiative and Auger recombination as well as the total recombination current. Put these all on the same plot. B) Comment on the relative importance of the different recombination mechanisms at carrier densities near lasing threshold (n = 3x1018 cm).