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You are the engineer in charge of a doping process that introduces boron into silicon that is initially pure. The boron surface concentration is maintained
You are the engineer in charge of a doping process that introduces boron into silicon that is initially
pure. The boron surface concentration is maintained at and the diffusivity parameters for boron
diffusing in silicon are: atom and
a Compute the diffusion coefficient of boron in silicon at
b The microprocessor you are currently working on requires a dopant concentration of
weight percent at a depth of microns from the exposed surface of the silicon wafer.
Compute the diffusion length required to achieve this doping.
c Compute the time, in minutes, required to achieve this doping level if the process is carried
out at
d We want to achieve the same concentration specified in part b but in one hour instead of the
time you computed in part c Calculate the temperature we should use. Hint: the diffusion
length stays constant here so the product of diffusion coefficient and time also has to
stay the same in parts and d
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