An abrupt silicon p-n junction has NA = 1x109 cm and ND = 5 x 105 cm-. Calculate injected hole concentration at a forward bias voltage of 0.25V at the edge of the depletion region on the n-side. Assume T=300K. What is the forward current density if p = 500 cm/V.s, Lp-1.14x 10 cm and Tp = 10-7s. The recombination lifetime T = 10-7 s. Calculate diffusion current and recombination current components. Comment on what mechanism dominates forward current characteristic.