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Estimate the GaAs material Fermi energy (EF) position with respect to Ec for the electron concentration n = 107 cm. Assume the GaAs effective density of state values at 300 K, i.e. Ne= 4.35107 cm, N-7.57108 cm-3 and Boltzmann constant is 8.617 x 10-5 eV/K. (ii) Calculate the EF position with respect to Ev for hole concentration p = 104 cm. Assume the GaAs effective density of state values at 300 K, i.e. No = 4.35107 cm, Nv = 7.57108 cm3 and Boltzmann constant is 8.617 10-5 eV/K. Estimate the GaAs material Fermi energy (EF) position with respect to Ec for the electron concentration n = 107 cm. Assume the GaAs effective density of state values at 300 K, i.e. Ne= 4.35107 cm, N-7.57108 cm-3 and Boltzmann constant is 8.617 x 10-5 eV/K. (ii) Calculate the EF position with respect to Ev for hole concentration p = 104 cm. Assume the GaAs effective density of state values at 300 K, i.e. No = 4.35107 cm, Nv = 7.57108 cm3 and Boltzmann constant is 8.617 10-5 eV/K. Estimate the GaAs material Fermi energy (EF) position with respect to Ec for the electron concentration n = 107 cm. Assume the GaAs effective density of state values at 300 K, i.e. Ne= 4.35107 cm, N-7.57108 cm-3 and Boltzmann constant is 8.617 x 10-5 eV/K. (ii) Calculate the EF position with respect to Ev for hole concentration p = 104 cm. Assume the GaAs effective density of state values at 300 K, i.e. No = 4.35107 cm, Nv = 7.57108 cm3 and Boltzmann constant is 8.617 10-5 eV/K.