Consider a GaAs MESFET. When the device is biased in the saturation region, we find that (I_{D}=18.5
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Consider a GaAs MESFET. When the device is biased in the saturation region, we find that \(I_{D}=18.5 \mu \mathrm{A}\) at \(V_{G S}=0.35 \mathrm{~V}\) and \(I_{D}=86.2 \mu \mathrm{A}\) at \(V_{G S}=0.50 \mathrm{~V}\). Determine the conduction parameter \(k\) and the threshold voltage \(V_{T N}\).
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Related Book For 
Microelectronics Circuit Analysis And Design
ISBN: 9780071289474
4th Edition
Authors: Donald A. Neamen
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