The inverter circuit in Figure 16.3 (a) is biased at \(V_{D D}=3.3 \mathrm{~V}\). Assume the transistor conduction parameter is \(K_{n}=50 \mu \mathrm{A} / \mathrm{V}^{2}\).

(a) Let \(R_{D}=100 \mathrm{k} \Omega\). (i) Determine the transition point. (ii) Determine \(v_{O}\) for \(v_{I}=3.3 \mathrm{~V}\).

(b) Repeat part (a) for \(R_{D}=30 \mathrm{k} \Omega\).

(c) Repeat part (a) for \(R_{D}=5 \mathrm{k} \Omega\).

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iD VDD VDD RD RD = VDS (sat) VGS VTN -Transition point VDD VDS Figure 16.3 (a) NMOS inverter with resistor load and (b) transistor characteristics and load line