The parameters of the transistors in Figure P10.88 are \(V_{T N}=0.6 \mathrm{~V}\), \(V_{T P}=-0.6 \mathrm{~V}, \quad k_{n}^{\prime}=100 \mu \mathrm{A} / \mathrm{V}^{2}, \quad k_{p}^{\prime}=60 \mu \mathrm{A} / \mathrm{V}^{2}, \quad\) and \(\quad \lambda_{n}=\lambda_{p}=\) \(0.04 \mathrm{~V}^{-1}\). The width-to-length ratios of \(M_{1}\) and \(M_{2}\) are 25 , and those of all other transistors are 50 . The value of \(V_{G S Q}\) is such that \(I_{D 1}=80 \mu \mathrm{A}\), and all transistors are biased in the saturation region. Determine the smallsignal voltage gain \(A_{v}=v_{o} / v_{i}\).

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V+=9V M4 M5 M3 M6 VBias M2 M REF= 80 VGSQ Figure P10.88