Phosphorus atoms are to be diffused into a silicon wafer using both predeposition and drive in heat treatments the background concentration of P in this silicon material is known to be 5 10 19 atoms m 3 The predeposition treatment is to be conducted at 950C for 45 minutes the surface concentration of P is to be maintained at a constant level of 1 5 10 26 atoms m 3 Drive in diffusion will be carried out at 1200C for a period of 2 5 h For the diffusion of P in Si, values of Q d and D 0 are 3 40 eV and 1 1 10 4 m 2 s, respectively (a) Calculate the value of Q 0 (b) Determine the value of x j for the drive in diffusion treatment (c) Also for the drive in treatment, compute the position x at which the concentration of P atoms is 10 24 m 3

Question: Phosphorus atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat treatments; the background concentration of P in this silicon

Phosphorus atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat treatments; the background concentration of P in this silicon material is known to be 5 × 10¹⁹ atoms/m³. The predeposition treatment is to be conducted at 950°C for 45 minutes; the surface concentration of P is to be maintained at a constant level of 1.5 × 10²⁶ atoms/m³. Drive-in diffusion will be carried out at 1200°C for a period of 2.5 h. For the diffusion of P in Si, values of Q_dand D₀ are 3.40 eV and 1.1 × 10^-4 m²/s, respectively.

(a) Calculate the value of Q₀.

(b) Determine the value of x_j for the drive-in diffusion treatment.

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