Phosphorus atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat treatments; the background concentration of P in this silicon material is known to be 51019 atoms /m3. The predeposition treatment is to be conducted at 950C for 45 minutes; the surface concentration of P is to be maintained at a constant level of 6.01026 atoms /m3. Drive-in diffusion will be carried out at 1200C for a period of 2.5h. For the diffusion of P in Si, values of Qd and D0 are 3.40eV and 1.1104m2/s, respectively. (a) Calculate the value of Q0. atoms/m2 (b) Determine the value of xj for the drive-in diffusion treatment. m (c) Also for the drive-in treatment, compute the position x at which the concentration of P atoms is 1024m3. m