Calculate the breakdown voltage for the junction of Problem 1.1 if the critical field is crit

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Calculate the breakdown voltage for the junction of Problem 1.1 if the critical field is ℰcrit = 4 × 105 V/cm.

Data from Prob. 1.1

Calculate the built-in potential, depletion-layer depths, and maximum field in a plane-abrupt pn junction in silicon with doping densities NA = 8 × 1015 atoms/cm3 and N= 1017 atoms/cm3. Assume a reverse bias of 5 V.

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Analysis and Design of Analog Integrated Circuits

ISBN: 978-0470245996

5th edition

Authors: Paul R. Gray, ‎ Paul J. Hurst Stephen H. Lewis, ‎ Robert G. Meyer

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