Derive and sketch the complete small-signal equivalent circuit for the device of Problem 1.15 with V_GS = 1 V, V_DS = 2 V, and V_SB = 1 V. Use ψ₀ = 0.7 V, C_sb0 = C_db0 = 20 fF, and C_gb = 5 fF. Overlap capacitance from gate to source and gate to drain is 2fF.

Data from Prob. 1.15:

An NMOS transistor has parameters W = 10 µm, L=1 µm, k’ =194 µA/V², λ = 0.024 V⁻¹, t_ox = 80 Aͦ, ϕ_f = 0.3 V, V_t0 = 0.6 V, and N_A = 5×10¹⁵ atoms/cm³. Ignore velocity saturation effects.