Examine the effect of velocity saturation on MOSFET characteristics by plotting I_D−V_DS curves for V_GS = 1 V, 2 V, and 3 V, and V_DS = 0 to 3 V in the following cases, and by comparing the results with and without inclusion of velocity saturation effects. Assume V_SB = 0, V_t0 = 0.6 V, k’ =194 µA/V², λ = 0, and ℰ_c =1.5 × 10⁶ V/m.

(a) W=100 µm and L=10 µm.

(b) W=10 µm and L=1 µm.

(c) W=5 µm and L=0.5 µm.