Consider an NMOS transistor with W = 2 µm, L= 0.5 µm, k€™ =194 µA/V², λ = 0, V_t0= 0.6V, and „°_c= 1.5 × 10⁶V/m. Compare the drain current predicted by the model of Fig. 1.41 to the drain current predicted by direct calculation using the equations including velocity saturation for V_GSfrom 0 to 3 V. Assume V_DS= 3 V and V_SB= 0. For what range of V_GSis the model of Fig. 1.41 accurate within 10 percent?

Fig. 1.41:

QD G V'GS Rsx VGs