An NMOS transistor has parameters W 10 m, L 1 m, k 194 A V 2 , 0 024 V 1 , t ox 80 A, f 0 3 V, V t0 0 6 V, and N A 510 15 atoms cm 3 Ignore velocity saturation effects (a) Sketch the I D V DS characteristics for V DS from 0 to 3V and V GS 0 5 V, 1 5 V, and 3 V Assume V SB 0 (b) Sketch the I D V GS ...

a So in triode region I D 970 2 V GS 06V DS V 2 DS A ...

An NMOS transistor has parameters W = 10 m, L=1 m, k =194 A/V 2 ,

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An NMOS transistor has parameters W = 10 µm, L=1 µm, k’ =194 µA/V², λ = 0.024 V⁻¹, t_ox = 80 Aͦ, ϕ_f = 0.3 V, V_t0 = 0.6 V, and N_A = 5×10¹⁵ atoms/cm³. Ignore velocity saturation effects.

(a) Sketch the I_D - V_DS characteristics for V_DS from 0 to 3V and V_GS = 0.5 V, 1.5 V, and 3 V. Assume V_SB = 0.

(b) Sketch the I_D- V_GS characteristics for V_DS = 2V as V_GS varies from 0 to 2 V with V_SB = 0, 0.5 V, and 1 V.

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Analysis and Design of Analog Integrated Circuits

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Authors: Paul R. Gray, ‎ Paul J. Hurst Stephen H. Lewis, ‎ Robert G. Meyer

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Question Posted: Sep 29, 2018 08:22 AM

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An NMOS transistor has parameters W = 10 m, L=1 m, k =194 A/V 2 ,

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a So in triode region I D 970 2 V GS 06V DS V 2 DS A ...View the full answer

Analysis and Design of Analog Integrated Circuits

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