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A boron pre-deposition diffusion is done at 950C into an n- type silicon wafer for 30 minutes. The wafer was originally uniformly doped with
A boron pre-deposition diffusion is done at 950C into an n- type silicon wafer for 30 minutes. The wafer was originally uniformly doped with cm phosphorus atoms. 1) Assume the dopant reaches the solubility limit. Determine the boron concentration at the wafer surface. 2) Determine the junction depth using the following equations. 3.69V KT N(x,.1) - Nerfel). D-10.5exp(- 2 Dr
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Materials Science and Engineering An Introduction
Authors: William D. Callister Jr., David G. Rethwisch
8th edition
470419970, 978-0470419977
