How would your answer to Problem 6-13 change if arsenic flow rate was more difficult to control
Question:
How would your answer to Problem 6-13 change if arsenic flow rate was more difficult to control in the process than the deposition time?
Problem 6-13
An article in the AT&T Technical Journal (March/April 1986, Vol. 65, pp. 39-50) describes the application of two-level factorial designs to integrated circuit manufacturing. A basic processing step is to grow an epitaxial layer on polished silicon wafers. The wafers mounted on a susceptor are positioned inside a bell jar, and chemical vapors are introduced. The susceptor is rotated and heat is applied until the epitaxial layer is thick enough. An experiment was run using two factors: arsenic flow rate (A) and deposition time (B). Four replicates were run, and the epitaxial layer thickness was measured (in tun). The data are shown below:
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