A p-n junction diode has a concentration of N A = 10 17 acceptor atoms per cm
Question:
A p-n junction diode has a concentration of NA = 1017 acceptor atoms per cm3 on the p-type side and a concentration of ND donor atoms per cm3 on the n-type side. Determine the built-in potential V0 at room temperature for a germanium diode for values of ND ranging from 1014 to 1019 cm-3. Also determine the peak value of the electric field strength for this same range, and plot both of these values as a function of ND on a semilog scale.
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The builtin potential of a pn junction diode is determined by the difference in Fermi levels between ...View the full answer
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