Consider a compound semiconductor AB described by the following defect processes:

Construct a Brouwer diagram, including regions of low pB2, intermediate pB2, and high pB2. In the region of intermediate pB2, assume that the concentration of electronic defects is greater than the vacancy concentration. When is this material intrinsic? When is it n-type? When is it p-type?

Transcribed Image Text:

0VA + VB B(g) 2BB+ 2V + 2h+