In Example 9.23 we assumed that in the intermediate region, the concentration of electronic defects is greater than the atomic defects. Draw a Brouwer diagram for the case where the concentration of atomic defects is greater than the electronic defects.

EXAMPLE 9.23

ZnO is a II-VI semiconductor that forms a hexagonal crystal structure with interpenetrating Zn and O sublattices. Consider the growth of ZnO by oxidation of Zn. At 390°C, a ZnO fi lm from zinc that contains 1% Al grows two orders of magnitude slower than when pure Zn is used. On the other hand, with 0.4% Li in the zinc, the growth rate increases two orders of magnitude