An n-type GaAs semiconductor is doped with N _d = 10 ⁶⁰ m ^-3 . The minority carrier lifetime is T _po = 2 × 10 ^-7 ₈ .

Calculate the steady-state increase in conductivity and the steady-state excess carrier recombination rate if a uniform generation rate g’ = 2 x 10210m—9’s"1 is incident on the semiconductor.