Consider, as shown in Figure, a uniformly doped silicon pn junction at T = 300 K with impurity doping concentrations of N _a = N _d = 5 x 10 ¹⁵ cm ^-3 and minority carrier lifetimes of T _n0 = T _p0 = T _O = 10-7 S. A reverse-biased voltage of VR = 10 V is applied. A light source is incident only on the space charge region, producing an excess carrier generation rate of g' = 4 x 10 ¹⁹ cm ^-3 s-1. Calculate the generation current density.

Illumination |_w_ -O-V +0 n